An Ultralow‐capacitance Bidirectional Punch‐through Transient Voltage Suppressor

Jie Zeng,Hao Jin,Wei Guo,Shurong Dong,Weihuai Wang,Zhihui Yu
DOI: https://doi.org/10.1002/tee.22293
IF: 0.923
2016-01-01
IEEJ Transactions on Electrical and Electronic Engineering
Abstract:A bidirectional punch‐through transient voltage suppressor based on a five‐layer N++P+PP+N++ structure is developed. By realizing the device using a 12‐finger layout, transmission line pulse measurements indicate that the device has met the IEC61000‐4‐2 standard with electrostatic discharge robustness of ±8 kV and has an ultralow capacitance value of less than 0.17 pF. Under 3.3 V forward or reverse bias, the device exhibits a leakage current of less than 2 nA. These excellent figures suggest that the developed structure is well suited for actual system‐level protection applications. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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