Abstract:The sidewall roughness of through-silicon vias (TSVs) plays a critical role in the reliability and integrity of signal transmission, particularly at high frequencies. In this study, we introduce a novel approach utilizing generalized closed-form expressions to assess the parasitic RLGC parameters resulting from the sidewall roughness of TSVs under high-frequency conditions. By comparing the calculated results for different sidewall roughness with the outcomes from full-wave electromagnetic (EM) simulations, a high degree of consistency is maintained. Simultaneously, the parasitic parameters showcase systematic variations that correspond to changes in sidewall roughness. Our findings underscore that the adverse impact of TSVs’ parasitic effects becomes more pronounced with heightened sidewall roughness. Importantly, the comparative analysis shows that the correction factor for inductance surpasses that of resistance, underscoring the significance of parasitic inductance. This finding attributes the primary source of parasitic effects to the parasitic inductance resulting from sidewall roughness. In addition, this study meticulously scrutinizes the experimental results, drawing comparisons against both calculated and simulated outcomes, resulting in a good degree of concurrence. This synchronization suggests that the proposed closed-form expressions adeptly capture the nuances of sidewall roughness in TSVs and thus prove highly suitable for scrutinizing a gamut of parasitic effects stemming from sidewall irregularities.

Closed-Form Expressions of Parasitic Parameters for Different Sidewall Roughness of Through-Silicon Vias Interconnects

Modeling and Analysis of Parasitic Parameters of Through-Glass Vias with Various Tapers and Sidewall Roughness

Derivation and Analysis of a Hemispherical Physical Model and the Correction Factors for the Sidewall Roughness of Through-Glass Vias

Electrothermal modelling of through silicon via (TSV) interconnects

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Analysis and Optimization of Sidewall Roughness on Microwave Performance of Through-Glass Vias in 3-D Integrated Circuits

Investigating the Tapered Profiles on the Parasitic Inductance of Through-Silicon Vias

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

General Analytical Method for Investigating Parasitic Characteristics of Through Glass Vias (TGVs) in 3-D Integration

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Study of Mutual Crosstalk Between Hemispheres in Roughness Hemispherical Model

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Parasitic RLGC Properties of High-density Through-Glass Via