Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN<sub>x</sub>‐based RRAM

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN<sub><i>x</i></sub>-Based Resistive Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Effect of the Bottom Electrode on the Digital and Analog Resistive Switching Behavior of SiNx-based RRAM

Temperature Biased Characteristics and Mechanism Analysis of a Cu_xSi_yO Resistive RAM

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Temperature Dependence of Resistive Switching Behavior in α-Ga2O3-Based RRAM Devices

Effects of annealing temperatures on resistive switching characteristics of TiO2 based ReRAM

Characteristics of Ni/AlOx/Pt RRAM Devices with Various Dielectric Fabrication Temperatures

Temperature Dependence of Resistive Switching Behavior in $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ -Based RRAM Devices

Effect of Ni3+ Concentration on the Resistive Switching Behaviors of Nio Memory Devices

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiN x ‐Based Resistive Random Access Memory

Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices

Thermal Stability and Electrical Resistivity of Sitanx Heating Layer for Phase-Change Memories

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Improvement of Bipolar Switching Properties of Gd:SiO x RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO 2 Treatment

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx‐based RRAM

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories

Bias Temperature Instability of Binary Oxide Based ReRAM