Abstract:The common nonpolar switching behavior of binary oxide-based resistive random access memory devices (RRAMs) has several drawbacks in future application, such as the requirements for a high forming voltage, a large reset current, and an additional access device to settle the sneak-path issue. Herein, we propose the tuning of the switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer, and a case study on Ta2O5-Ta systems is provided. The devices are designed to be Pt/Ta2O5(5 - x/2)/Ta(x)/Ta2O5(5 - x/2)/Pt with x = 0, 2, or 4 nm. The reference devices without the Ta nanolayer exhibit an expected nonpolar switching behavior with a high forming voltage of similar to-4.5 V and a large reset current of >10 mA. In contrast, a self-compliance bipolar switching behavior with a low forming voltage of similar to-2 V and a small reset current of <1 mA is observed after inserting a 2 nm Ta nanolayer. When the Ta nanolayer is increased to 4 nm, a complementary resistive switching (CRS) behavior is found, which can effectively settle the sneak-path issue. The appearance of CRS behavior suggests that a thin Ta nanolayer of 4 nm is robust enough to act as an inner electrode. Besides, the behind switching mechanisms are thoroughly discussed with the help of a transmission electron microscope and temperature-dependent electrical measurements. All these results demonstrate the feasibility of tuning switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer and might help to advance the commercialization of binary oxide-based RRAMs.

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx‐based RRAM

Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM Devices for Neuromorphic Applications

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Impact of Ta/Ti Electrodes on Linearities of TaO X -Based Resistive Random-Access Memories for Neuromorphic Computing

Thermal Impact on the Resistance Switching Properties in Tantalum Oxide Based RRAM

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Ta0x/Hf02-based RRAM with Self-Selective Feature Caused by Current Compliance Modulation

Highly electrical resistive SiTiN<i><sub>x</sub></i> heating layers and diffusion barriers for PCRAM

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Study on High-Resistance State Instability of TaOx-Based RRAM

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Effect of Oxygen Profiles on the RS Characteristics of Bilayer TaOx/TaOy Based RRAM