Abstract:The common nonpolar switching behavior of binary oxide-based resistive random access memory devices (RRAMs) has several drawbacks in future application, such as the requirements for a high forming voltage, a large reset current, and an additional access device to settle the sneak-path issue. Herein, we propose the tuning of the switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer, and a case study on Ta2O5-Ta systems is provided. The devices are designed to be Pt/Ta2O5(5 - x/2)/Ta(x)/Ta2O5(5 - x/2)/Pt with x = 0, 2, or 4 nm. The reference devices without the Ta nanolayer exhibit an expected nonpolar switching behavior with a high forming voltage of similar to-4.5 V and a large reset current of >10 mA. In contrast, a self-compliance bipolar switching behavior with a low forming voltage of similar to-2 V and a small reset current of <1 mA is observed after inserting a 2 nm Ta nanolayer. When the Ta nanolayer is increased to 4 nm, a complementary resistive switching (CRS) behavior is found, which can effectively settle the sneak-path issue. The appearance of CRS behavior suggests that a thin Ta nanolayer of 4 nm is robust enough to act as an inner electrode. Besides, the behind switching mechanisms are thoroughly discussed with the help of a transmission electron microscope and temperature-dependent electrical measurements. All these results demonstrate the feasibility of tuning switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer and might help to advance the commercialization of binary oxide-based RRAMs.

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiN x ‐Based Resistive Random Access Memory

Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM Devices for Neuromorphic Applications

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Impact of Ta/Ti Electrodes on Linearities of TaO X -Based Resistive Random-Access Memories for Neuromorphic Computing

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Thermal impact on the resistance switching properties in tantalum oxide based RRAM

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Effects of Different Dopants on Switching Behavior of HfO2-based Resistive Random Access Memory

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Thermal Stability and Electrical Resistivity of Sitanx Heating Layer for Phase-Change Memories

Highly electrical resistive SiTiN<i><sub>x</sub></i> heating layers and diffusion barriers for PCRAM