High-Quality P-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

Seunghwan Park,Tsutomu Minegishi,D. C. Oh,Hyunjae Lee,Toshinori Taishi,Jinsub Park,Mina Jung,Jiho Chang,Il Im,Jun‐Seok Ha,Soon‐Ku Hong,Ichiro Yonenaga,Toyohiro Chikyow,Takafumi Yao
DOI: https://doi.org/10.1143/apex.3.031103
IF: 2.819
2010-01-01
Applied Physics Express
Abstract:This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines. Meanwhile, ZnO:[N+Te] layers show dominant A0X emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of photoluminescence properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121–157 meV.
What problem does this paper attempt to address?