Abstract:We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO:F/IZTO layers. The fluorine in IZTO:F film was in-situ doped through IZTO deposition using RF sputtering with CF 4 as the reactive gas. Furthermore, the electrical characteristics of the IZTO TFTs with varied IZTO:F/IZTO layer thickness ratios were investigated to optimize the IZTO:F thickness ratio in the channel. The TFTs with the optimal IZTO:F/IZTO layer thickness demonstrated significantly enhanced reliability under various stress conditions because the doped fluorine can occupy oxygen vacancies and provide stronger bonding with the metal ions in the active layer. Specifically, the TFT threshold voltage shift (ΔV th ) with and without IZTO:F layers were 2.72 V and 5.77 V under positive bias stress (PBS), respectively, which is 2.12 times reduction. The ΔV th was also decreased from −2.23 V to −0.30 V under negative bias stress (NBS), which shows an improvement of 7.43 times. In addition, these devices also have enhanced reliability under negative bias illumination stress (NBIS). The fluorinated IZTO TFTs with the IZTO:F/IZTO layer exhibits enhanced reliability as a result of the defects passivation in the doped fluorine but also have a low manufacturing cost due to in-situ fluorine doping with no additional doping step. It is believed that fluorinated IZTO TFT with the enhanced device reliability will be a good candidate to support the requirements for the next-generation display backplanes.

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P‐15: the Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

Suppressed Degradation of Elevated-Metal Metal–Oxide Thin-Film Transistors under Bipolar Gate Pulse Stress

Fluorine IMP effect on negative bias temperature instability and process induced defects

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Degradation characteristics and light-induced effects of polymer thin-film transistors

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Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

Study on the Instability of Organic Field-Effect Transistors Based on Fluorinated Copper Phthalocyanine

Investigation on Stability in Solution-Processed In-Zn-Sn-O TFT Array under Various Intensity of Illumination