Abstract:Thin-film transistors (TFTs) with solutionprocessed indium oxide (In 2 O 3 ) as the channel layer and with aluminium oxide as the gate dielectric were fabricated. The fabricated In 2 O 3 TFTs are tested for reliability in low-voltage operation. Measurement results show that the threshold voltage (V th ) increases from 0.6 V to 1.4 V under positive bias stress (PBS) and decreases from 0.55 V to 0.22 V under negative bias stress (NBS). Upon relaxation for long enough time, Vth restores close to the pristine values. When switching the In 2 O 3 TFTs repeatedly by applying a pulsed voltage of ±3V to the gate, the Vth shift (ΔVth) depends on the pulse width. While ΔVth generally decreases with the pulse width under pulsed NBS, Vth instability is considerably worse under pulsed PBS, particularly when the pulse width is between 5 μs and 50 ms. Apart from revealing the differences in the trapping and de-trapping of electrons and holes at the In 2 O 3 /Al 2 O 3 interface, the results have implications for using the In 2 O 3 TFTs in circuits in which they are biased or switched repeatedly.

Suppressed Degradation of Elevated-Metal Metal–Oxide Thin-Film Transistors under Bipolar Gate Pulse Stress

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Light-Illumination-Induced Degradation in Elevated-Metal Metal-Oxide Thin-Film Transistors without and with Fluorination

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

Threshold Voltage Instabilities In Perpetual Switching Of Low-Voltage Thin-Film Transistors With Solution-Processed In2o3 Channel Layer

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Improvement in Reliability of Amorphous Indium–gallium–zinc Oxide Thin-Film Transistors with Teflon/SiO2 Bilayer Passivation under Gate Bias Stress

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Threshold Voltage Instabilities in Perpetual Switching of Low-Voltage Thin-Film Transistors with Solution-Processed In<inf>2</inf>O<inf>3</inf> Channel Layer

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Mechanism Study of Positive-Bias Stress Stability for Solution Processed Oxide Semiconductor TFT

Impact of Bias Stress and Endurance Switching on Electrical Characteristics of Polycrystalline ZnO-TFTs with Al 2 O 3 Gate Dielectric

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress