Abstract:Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indium nitrate precursors. Diodes with different nitrogen content in their precursor were prepared and their properties were investigated. With scanning electron microscopy, film surface with mixed hexagonal flakes and tiny blocks was characterized for all samples. Certain morphologies varied for samples with different N contents. In the photoluminescence analyses, the intensity of the oxygen-related defects peak increased with the increasing of nitrogen content. The diodes were fabricated with an Au and In deposition on the top and backside. The diode current–voltage as well as capacitance–voltage characteristics were examined. An ununiformed n-type concentration distribution with high concentration near the interface in the MgZnO:Er,N layer was characterized for all samples. Diodes with high nitrogen content exhibit reduced breakdown voltage and higher interface concentration characteristics. Under reversed bias conditions with an injection current of 50 mA, a light spectrum with two distinct green emissions around wavelengths 532 and 553 nm was observed. A small spectrum variation was characterized for diodes prepared from different nitrogen content. The diode luminescence characteristics were examined and the diode prepared from N/Zn=1 in the precursor showed an optimal injection current-to-luminescence property. The current and luminescence properties of the diode were characterized and discussed.

Conductivity Study Of Nitrogen-Doped Magnesium Zinc Oxide Prepared By Spray Pyrolysis

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film

Preparation and Characterization of N Doped P-type MgZnO Film

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Formation of P-Type Mgzno by Nitrogen Doping

Effects of Nitrogen Doping and Illumination on Lattice Constants and Conductivity Behavior of Zinc Oxide Grown by Magnetron Sputtering

Temperature-dependent conduction and transport mechanisms in pure and Zn-doped MgO nanomaterials

Synthesis and characterization of structure, emission and electrical properties of MgxZn1−xO films obtained by spray pyrolysis with different Mg precursors

On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

The enhanced sensing performance of ZnO-based photodetector by Mg doping

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

The Effects of Nitrogen Ionization During Preparation and Oxygen Pressure During Annealing on the Morphology, Structure, and Luminescent Properties of Mg-doped ZnO Thin Films

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of Mg x Zn 1− x O film grown by magnetron sputtering

Optical and Electrical Properties of Highly Nitrogen-Doped Zno Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Optical properties of p-type ZnO doped by lithium and nitrogen

Properties of N-doped ZnO thin films in annealing process