Abstract:High quality ZnO thin films have been grown on Si (100) substrates with MgO buffer layers. An electron beam evaporation technique was used to grow MgO buffer layer on Si substrates followed by a magnetron sputtering process to deposit Zn films on the MgO-buffered Si substrates, next, a two-step annealing process was employed to oxidize the Zn films to form ZnO. The effects of the annealing temperature on the photoluminescence (PL) and orientation of ZnO nanocrystalline thin films were studied. For ZnO films annealed between 400°C and 700°C in an O2 ambient, the quality of the ZnO films was improved with increasing annealing temperature. However, as the annealing temperature was increased to over 800°C, the ZnO film underwent a phase transformation from ZnO to a MgxZn1−xO alloy, where the x value in the alloy increased with increasing annealing temperature. The MgxZn1−xO alloy films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and reflection spectra. XRD results show that the MgxZn1−xO alloy films maintain the hexagonal structure with a lattice constant close to that of ZnO. In films with Mg incorporation, intense ultraviolet band edge photoluminescence was observed at room temperature. The photoluminescence (PL) spectra show that MgxZn1−xO alloy has a wide band gap with a large exciton binding energy of 53meV. The band gap of the MgxZn1−xO alloy shifts to higher energy with increasing annealing temperature. The blue-shift of the fundamental band gap of the alloy annealed at 1000°C is estimated to be ∼300meV.

The Effects of Nitrogen Ionization During Preparation and Oxygen Pressure During Annealing on the Morphology, Structure, and Luminescent Properties of Mg-doped ZnO Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effect of Oxygen Pressure on the Optical Properties of MgZnO Films Prepared by PLD

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

Influence of Oxygen Partial Pressure on the Crystal Quality and Optical Properties of Mg-Doped Zno Films

Effect of Annealing Atmosphere on Physical Characteristics and Photoluminescence Properties of Nitrogen-Implanted ZnO Thin Films

Effects of Thermal Treatment on the Properties of ZnO Films Deposited on MgO-buffered Si Substrates

Oxygen Partial Pressure Dependence of the Properties of Mgzno Thin Films During Annealing

Effect of Annealing Ambient on the Structural, Optical and Electrical Properties of (Mg,al)-Codoped ZnO Thin Films

Effect of Annealing Ambient on Electrical and Optical Properties of Ga-doped Mg Zn1−O Films

Structure and Optical Properties of Mg-doped ZnO Nanomaterials

Effect of Annealing Temperature on the Structural and Optical Properties of Zn1−xMgxO Particles Prepared by Oxalate Precursor

Effects of Annealing Atmosphere and Temperature on the Structure and Photoluminescence of ZnO Films Prepared by Pulsed Laser Deposition

Effects of Oxygen Pressure on Optical Properties of ZnO Thin Films

Effects of the Oxygen Partial Pressure and Annealing Atmospheres on the Microstructures and Optical Properties of Cu-Doped Zno Films

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO：N Film Produced by Annealing Treatment

Preparation and Characterization of N Doped P-type MgZnO Film

Effect of Annealing in N_2 on Structure and Optical Properties of ZnO Thin Films