Effects of Annealing Atmosphere and Temperature on the Structure and Photoluminescence of ZnO Films Prepared by Pulsed Laser Deposition

ZHANG Xia,LIU Yu-zhen,KANG Chao-yang,XU Peng-shou,WANG Jia-ou,KUI Re-xi
2010-01-01
Abstract:Thin ZnO films were grown on silicon(111)/sapphire substrate via pulsed laser deposition technique and then some of the samples were treated with different rapid thermal annealing(RTA) conditions,such as annealing temperature ranging of 500 to 900 ℃ and annealing ambience(nitrogen and oxygen).Finally,these samples were characterized with X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS),IR and photoluminescence(PL),respectively.It was observed that the quality and the grain size of thin ZnO films increased after annealing.Moreover,at the same lower annealing temperature,the films annealed under nitrogen ambience showed better qualities and few oxygen vacancies than those annealed under oxygen ambience.The experiment showed that the best annealing temperature under nitrogen ambience was 900 ℃ and the optimum annealing temperature under oxygen ambience was 800 ℃.Furthermore,as oxygen vacancies decreased,stronger green photoluminescence was detected,possibly related to the contents of the oxygen vacancies.
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