Abstract:The exploration of zinc oxide (ZnO) has seen rapid growth due to its wide bandgap, high thermal conductivity, and high electron mobility within its nanostructures, making it highly valuable for applications in electronic and optical devices. This study involves the deposition of ZnO nanostructures onto a quartz substrate using the thermal evaporation deposition technique. The research delves into the influence of various annealing environments on morphology and electronic/atomic structures. X-ray Diffraction (XRD) analysis reveals the development of the ZnO phase with a preferred orientation when annealed in a mixture of hydrogen and argon gases. It was observed that the films do not transform into complete ZnO for the as-prepared and for lower temperatures (< 400 °C). Annealing at lower temperatures or room temperature retains the metallic Zn. When subjected to higher annealing temperatures in the presence of oxygen and ambient conditions, formation of ZnO hexagonal wurtzite structures was evident. A wide variation in the morphology was observed for films annealed in different annealing environments, from petal-like structures to rods. Both the band edge and defect emissions using photoluminescence were observed to vary with varying annealing conditions. In-situ XANES uncovers the reduction of Zn and metallic nature noticed in the as-prepared sample and argon annealing at 400 °C. A higher charge transfer by Zn with a prominent delocalization of Zn 4p state was observed in oxygen annealing environment at 400 °C with an enhanced coordination of Zn–O and Zn–Zn. These distinct photoluminescence emissions from the films were correlated to the electronic structure and local atomic structure. Further, this investigation provides a path to develop next-generation optoelectronic devices.

Effects of the Oxygen Partial Pressure and Annealing Atmospheres on the Microstructures and Optical Properties of Cu-Doped Zno Films

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Effect of Cu Concentration on Optical Properties of Zn1-xCuxO Thin Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO films

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

Effect of Rapid Thermal Annealing Ambient on Photoluminescence of Zno Films

Effects of Annealing on the Ferromagnetism and Photoluminescence of Cu-Doped Zno Nanowires

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Tuning Band Gaps and Photoelectrochemical Properties of Electrodeposited CuO Films by Annealing in Different Atmospheres

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Role of annealing environments on the local electronic and optical properties of zinc oxide films

Effect of oxygen partial pressure on microstructure, optical and electrical property of C-Al co-doped ZnO films

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films

Influence of Annealing on Microstructure and Magnetic Properties of Co-Sputtered Co-doped ZnO Thin Films