Abstract:Nitrogen-doped ZnO (ZnO:N) thin films with multi-buffer-layers, Mg0.1Zn0.9O / ZnO super-lattice structure, were grown on sapphire (0 0 0 1) by plasma-activated laser molecular beam epitaxy (L-MBE) using an atomic nitrogen source. High resolution X-ray diffraction (HR-XRD) measurement demonstrated that all the ZnO:N samples are (0 0 0 2) oriented and the residual strain along c-axial are effectively controlled. Room temperature (RT) Hall measurements indicate that the 200 °C sample shows a p-type behavior with a mobility of 4.08 cm2/V s and a carrier density of 1.47×1017 cm−3. The 300 °C sample shows a weak p-type behavior with a mobility of 0.75 cm2/V s and a carrier density of 4.40×1016 cm−3. However, the 200 °C sample is not stable and reverted back to n-type conductivity in about 5 days. The X-ray photoelectron spectra (XPS) of N1s display two peaks at 404 eV and 396 eV which are related to (N2)Oand NO, respectively. The 10 K low temperature photoluminescence (PL) spectra of the 200 °C sample exhibits an acceptor bound exciton peak at 3.351 eV and a donor–acceptor pair (DAP) peak at 3.228 eV, associated with NO acting as acceptors.

Optical and Electrical Properties of Highly Nitrogen-Doped Zno Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Doping Efficiency, Optical and Electrical Properties of Nitrogen-Doped ZnO Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Donor–acceptor Pair Luminescence of Nitrogen Doping P-Type ZnO by Plasma-Assisted Molecular Beam Epitaxy

P-Type Doping of ZnO∶N Thin Fims by Alternating the Growth Atmosphere

Optical properties of p-type ZnO doped by lithium and nitrogen

Control of N/N-2 Species Ratio in No Plasma for P-Type Doping of Zno

Optical and Electrical Properties of P-Type ZnO Fabricated by NH 3 Plasma Post-Treated ZnO Thin Films

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

Plasma-activated Nitrogen-Doped P-Type ZnO Thin Films with Multi-Buffer-layers Grown on Sapphire (0001) by L-MBE

Plasma-Free Nitrogen Doping and Homojunction Light-Emitting Diodes Based on Zno

Fabrication of Nitrogen Doped P-Zno and Zno Light-Emitting Diodes on Sapphire

Effects of (P, N) Dual Acceptor Doping on Band Gap and P-Type Conduction Behavior of ZnO Films

P-Type Doping of Zno by Means of High-Density Inductively Coupled Plasmas

Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

P-Type Conductivity In N-Doped Zno: The Role Of The N-Zn-V-O Complex