Abstract:Different nitrogen sources, pure N2, pure NO, and NO mixed with O2 (25% NO + 75% O2), are used to confirm the effects of N+, N2+, and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of N2, NO, and NO mixed with O2, the major implanted ions are, respectively, N2+ ions, N2+ mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, N2+, and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [(N2)O], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with O2, while others still remain n-type conductivity. The mechanism of p-type conversion by N2, NO, and NO mixed O2 PIII was investigated in this paper.

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