Abstract:Single crystal beams made by (111)-oriented Si micromachining are usually anchored to the substrate directly. It is difficult to use the beams as resonators, since they are electrically connected to the substrate. This paper presents a modified process to fabricate single crystal nano beams which are electrically isolated from the substrate. In this process, the single crystal nano beams are fully released from the substrate and mechanically supported by metal wires, which also serve as electrical connections. The metal wires are much stiffer than the beams and do not degrade the mechanical properties of the beam according to simulations. The length and width of the beams are determined by photolithography. The thickness of the beam and the gap between the beam and the substrate are determined by the dry etching and KOH etching processes. The influence of KOH etching on the beam thickness is documented through ongoing experiments. At present, the double clamped beams and the cantilever beams have been fabricated. The thinnest beam to date was measured to be 47 nm. The resistance between the beam and the substrate was measured to be 214GΩ, while the resistance of a 147 nm-thick beam was measured to be 816 Ω. The surface roughness of the (111) plane is also discussed. The RMS surface roughness of the nano beam was measured to be 1.08 nm in an area of 5 μm × 5 μm, which was etched with 45%wt. KOH at 50°C.

Fabrication of Nanoslits with <111> Etching TSWE Method

Fabrication of Single-Crystal Silicon Nanoslits with Feature Sizes Down to 4 nm and High Length-Width Ratios

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Wafer-Scale Fabrication of V-Shaped Silicon Nano-Slit Arrays

Fabrication of Optofluidic Systems Using Isotropic Wet Etched Masters in < 111 > Silicon Wafer

Fabrication Method of Silicon Nanostructures by Anisotropic Etching

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

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Fabrication of Nanopore and Nanopore Arrays in Si Substrate by Wet Etching Method at Wafer Scale

Fabrication of Silicon Nanopores with Tunable Shapes and Sizes

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

A novel method to fabricate single crystal nano beams with (111)-oriented Si micromachining

Rectangular Suspended Single Crystal Si Nanowire with (001) Planes and <001> Direction Developed Via TMAH Wet Chemical Etching

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Controllable Fabrication of Pyramidal Silicon Nanopore Arrays and Nanoslits for Nanostencil Lithography

Fabrication of Submicron Devices on the (011) Cleave Surface of a Cleaved-Edge-overgrowth GaAs/AlGaAs Crystal

Fabrication of Solid State Nanopore in Thin Silicon Membrane Using Low Cost Multistep Chemical Etching

Fabrication of 11-Nm-wide Silica-Like Lines Using X-Ray Diffraction Exposure

Metal-Assisted Chemical Etching Using Tollen’s Reagent to Deposit Silver Nanoparticle Catalysts for Fabrication of Quasi-ordered Silicon Micro/Nanostructures

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Fabrication of Nanoslits with &lt;111&gt; Etching TSWE Method