Fabrication of 11-Nm-wide Silica-Like Lines Using X-Ray Diffraction Exposure

Zhu Xiao-Li,Xie Chang-Qing,Zhang Man-Hong,Liu Ming,Chen Bao-Qin,Pan Feng
DOI: https://doi.org/10.1088/0256-307x/26/8/086803
2009-01-01
Abstract:Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm- wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10 mu m using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.
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