Microfabrication of Nano-Scale Feature Lines

任黎明,王文平,陈宝钦,周毅,黄如,张兴
DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.12.034
2004-01-01
Abstract:Electron-beam lithography with high resolution and ICP etching with high selectivity-ratio and high anisotropy are investigated. Using chemically amplified resist SAL-601 as the electron resist, optimal process parameters of electron-beam lithography and ICP etching are achieved. These parameters are combined with electron-beam proximity correction to form 30 nm lines with clear-cut cross-sectional profiles.
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