Dual-Beam Laser Direct Writing Nano-Lithography System Based on Peripheral Photoinhibition Technology

Zhou Guozun,He Minfei,Yang Zhenyao,Cao Chun,Xie Fei,Cao Yaoyu,Kuang Cuifang,Liu Xu
DOI: https://doi.org/10.3788/CJL202249.0202001
2022-01-01
Abstract:Objective Laser direct writing technology based onperipheralphotoinhibitionPPIisathree-dimensionaldirectwritinglithographytechnologythatutilizesnonlinearopticaleffectstoreducethelithographiclinewidth Comparedwithtwo-photonlaserdirectwritingthePPItechnologycanachievehighresolutionandthree-dimensionallaserfabricationbeyondtheopticaldiffractionlimit However therearestillsomelimitationsinthedesignanddevelopmentofthePPIlaserdirectwritinglithographysystem Atpresent thePPIlaserdirectwritinglithographysystemgenerallyselectsahighprecisionpiezoelectricplatformasasinglescanningdevice becausethepiezoelectricplatformhastheadvantagesofhighstabilitydirectthree-dimensionalscanningandsimplifiedopticaldesign However thescanningspeedofthepiezoelectricplatformisunacceptableinnanofabrication andthelargeinertiaofthepiezoelectricplatformmakestheaccelerationanddecelerationtimetoolonginthescanningprocess Itisdifficulttocompletethefabricationoflarge-sizethree-dimensionalnanodevices Thescanningspeedofagalvanometerscannerismuchhigherthanthatofthepiezoelectricplatform butitcanonlyimplementtwo-dimensionalscanningAimingattheaboveproblems aPPIlaserdirectwritinglithographysystemwithtwoscanningdevicesofahigh-speedgalvanometerscannerandathree-dimensionaltranslationalpiezoelectricplatformisdesignedinthispaper Oursystemhasthreeoperationmodes includingpiezoelectricplatformscanningmode galvanometerscanningmode andcompositeprocessingmode whicharesuitablefordifferentnanodevicefabricationrequirements MethodsIntheexperiments aphotoresistwith7-diethylamino-3-thenoylcoumarinDETCasaninitiatorisselectedinfabrication AsatypicalphotoresistinitiatorusedinPPIlaserdirectwritinglithographyDETCinducesthedepolymerizationreactioninthephotoresistthroughthestimulatedemissiondepletioneffecttoachievesmall-linewidthdirectwritingAccordingtothephotochemicalcharacteristicsofDETC afemtosecondlaserwithwavelengthof780nmandacontinuouslaserwithwavelengthof532nmareselectedasexcitationlightandinhibitionlight respectivelyInoursystem twoacousticopticalmodulatorsareusedtocontrolthelaserpowersoftheexcitationlightandtheinhibitionlight Avortexphaseplateaddsa0-2 pi vortexphasetotheinhibitionlight sothattheinhibitionlightisfocusedinadoughnut-shapespot Therearetwotypesofscanningdevicesinthesystem ahigh-speedgalvanometerscannerandathree-dimensionaltranslationalpiezoelectricplatform Throughathree-levelcontroldataconversionscheme thestructuralinformationofthenanodeviceistransformedintothecontrolsignalsofthegalvanometers piezoelectricplatform andAOMstorealizethethree-dimensionallaserdirectwritingfabrication Thesystemalsohaspowermonitors whichmeasurethepoweroftheexcitationlightandtheinhibitionlightinrealtime ResultsandDiscussionsBytheexperimentaltestsandtheexposureparameteroptimization thepolymerizedline-arraysattachedonsubstratesurfaceswitha64nmlinewidthareobtainedundertheexcitationlightpowerof7 7mW theinhibitionlightpowerof6 9mW andthescanningspeedof10 mu m sFig5aTocomparetheeffectofinhibitionlightontheexposureresults thesamestructureisfabricatedusingthesameexposureparametersexceptwithoutinhibitionlight Whenonlyexcitationlightisinvolvedinthedirectwritingprocess thelinewidthisexpandedto93nmFig5bUsingthePPItechnologytheaveragewidthofpolymerizedlinesonsubstratesisreducedby29nm whichprovestheeffectivenessofPPIinreducinglinewidth Tofurtherstudytherelationshipbetweentheinhibitionlightandthestructuralfeaturesize agroupofsuspendedlinesarefabricatedinthe experimentFig6aAsetofvaluesintherangeof0--14mWareselectedasthepowerparametersofinhibitionlightforsuspendedlinefabrication ThevariationofthesuspendedlinewidthsFig6bisinaccordancewiththetheoreticalexpectationFig1fItcanbeseenthatwiththeincreaseofinhibitionlightpower thewidthofthesuspendedlinedecreases Whentheinhibitionlightpoweris0 thewidthofthesuspendedlineobtainedbytwo-photondirectwritingis134nmFig6cWhenthepowerisincreasedto13 6mW asuspendedlinewithalinewidthof30nmisfabricated ItisfurtherverifiedthatthePPItechnologycangreatlycompressthefeaturesizeofthenanostructureupto1 26oftheprocessingwavelength Figure7isasetofscanningelectronmicroscopeimagesofcomplexmicro-nanostructuresmanufacturedbyoursystem Figure7confirmsthecapabilityofoursysteminnano-arraystructurefabrication large-areacurvestructurefabrication high-speedthree-dimensionalstructurefabrication etc ConclusionsForthehigh-speedandhigh-precisionfabricationofcomplexthree-dimensionalmicro-nanostructures adual-beamlaserdirectwritinglithographysystembasedonthePPItechnologyisdesignedanddeveloped Tomeetdifferentrequirements thesystemmayoperateindifferentmodesatuseroptions includingpiezoelectricplatformscanningmode galvanometerscanningmode andcompositeprocessingmode Bytheaccuratecontroloflaserpowerandscanningspeed polymerizedline-arraysattachedonsubstratesurfaceswith64nmlinewidthandagroupofsuspendedlineswith30nmlinewidthareobtainedintheexperiments Themaximumfabricatingspeedofoursystemreaches50mm s Itissuitablefortheefficientmanufacturingofavarietyofplanarandthree-dimensionalmicro-nanostructures anditprovidesapowerfulscientificresearchtoolformanyresearchfieldsof micro-nano optics micro-nano electronics biology and other discipline
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