A Novel Pmma/Neb Bilayer Process for Sub-20 Nm Gold Nanoslits by A Selective Electron Beam Lithography and Dry Etch

Xiaqi Huang,Jinhai Shao,Chialin Tsou,Sichao Zhang,Bingrui Lu,Ling Hao,Yan Sun,Yifang Chen
DOI: https://doi.org/10.1016/j.mee.2017.02.007
IF: 2.3
2017-01-01
Microelectronic Engineering
Abstract:A novel electron beam lithography process using PMMA/NEB bilayer was successfully developed for the generation of ultrafine slits as well as broad trenches in a thick gold film. Slit-widths from micrometers down to sub-20nm as the minimum feature size have been achieved. Electron beam lithography on the bilayer of PMMA/NEB with opposite tones between the top and the bottom layer was carefully studied by the contrast curve method. The processing parameters in both electron beam lithography and dry-etch were optimized for achieving ultrafine PMMA/NEB lines as the templates for forming nanoslits in Au films by the subsequent metallization and lift-off. The developed process is not only capable of replicating nano-trenches in Au film, but also applicable for manufacturing concave nanostructures in metals as a whole.
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