Study on preparation of ultrathin PMMA resist by Langmuir Blodgett technique

Ning Gu,Feng Qian,Qingyue Y. Hong,Zuhong Lu,Xiangdong Yu,Li Peng,Zhongyi Zhang,LiXin Zhao,Haiping Zhang,Yongkuan Liu
1996-01-01
Abstract:The designed Langmuir Blodgett trough using a steady-laminar flowing subphase was exploited to support polymer monolayer which was used as a resist in the field of lithography. The ultrathin polymethyl-metha-crylate (PMMA) films prepared by this technique were explored as high resolution electron beam resists. The lithographic exposure conditions of these films were investigated and the results of fabricating 4�� mask having a feature linewidth of 0.38 ��m and a resolution of 0.5 ��m were achieved by using the electron beam machine as exposure tool.
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