Abstract:The formation of polymeric micro-patterns on various substrates via a photolithography procedure has been widely used in semiconductor fabrication. Standard polymer patterns are usually fabricated via photosensitive polymer varnishes, in which large amounts of potentially harmful solvents with weight ratios over 50 wt% have to be removed. In the current work, a novel pattern-formation methodology via solvent-free electrospun photosensitive polymeric fibrous membranes (NFMs) instead of the conventional photosensitive solutions as the starting photoresists was proposed and practiced. For this purpose, a series of preimidized negative auto-photosensitive polyimide (PSPI) resins were first prepared via the two-step chemical imidization procedure from the copolymerization reactions of 3,3′,4,4′-benzophenonetetracarboxylic- dianhydride (BTDA) and two ortho-methyl-substituted aromatic diamines, including 3,3′,5,5′-tetramethyl-4,4′-diaminodiphenylmethane (TMMDA) and 3,7-diamino-2,8-dimethyl- dibenzothiophene sulfone (TSN). The derived homopolymer PI-1 (BTDA-TMMDA) and the copolymers, including SPI-2~SPI-6, with the molar ratio of 5~25% for TSN in the diamine units, showed good solubility in polar solvents. Then, a series of PSPI NFMs were fabricated via standard electrospinning procedure with the developed PSPI solutions in N,N-dimethylacetamide (DMAc) with a solid content of 25 wt% as the starting materials. The derived PSPI NFMs showed good thermal stability with 5% weight loss temperatures higher than 500 °C in nitrogen. Meanwhile, the derived PSPIs showed good photosensitivity to the ultraviolet (UV) emitting wavelengths of i-line (365 nm), g-line (405 nm) and h-line (436 nm) of the high-pressure mercury lamps in both forms of transparent films and opaque NFMs. Fine micro-patterns with a line width of around 100 μm were directly obtained from the representative SPI-4 NFM via standard photolithography procedure.

Ultrathin Resist Films Patterning Using a Synchrotron Radiation Lithography System

Study on preparation of ultrathin PMMA resist by Langmuir Blodgett technique

Langmuir-Blodgett resist films for microlithography by exposure to a scanning electron microscope

Click chemistry assisted organic-inorganic hybrid photoresist for ultra-fast two-photon lithography

Rapid Prototyping of Soft Lithography Masters for Microfluidic Devices Using Dry Film Photoresist in a Non-Cleanroom Setting

Recent progress in non-photolithographic patterning of polymer thin films

Fabrication of 1-d nanochannels on PMMA substrate by photoresist-free uv lithography and UV-assisted bonding under low temperature

Fabrication Of Ultrathick Micromolds Using Jsr Thb-430n Negative Uv Photoresist

Patterning Layered Polymeric Multilayer Films by Room‐Temperature Nanoimprint Lithography

Multilength Scale Patterning of Functional Layers by Roll-to-Roll Ultraviolet-Light-Assisted Nanoimprint Lithography

Fabrication and characterization of stable ultrathin film micropatterns containing DNA and photosensitive polymer diazoresin

Ultrafast Large Area Micropattern Generation in Non-absorbing Polymer Thin-Films by Pulsed Laser Diffraction

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Ultra-Fast Block Copolymers for Sub-5 Nm Lithographic Patterning

Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield

Directed self-assembly of high-chi block copolymer for nano fabrication of bit patterned media via solvent annealing

Imprint Lithography with 25-Nanometer Resolution

Formation of Nano-Fibrous Patterns on Aluminum Substrates via Photolithographic Fabrication of Electrospun Photosensitive Polyimide Fibrous Membranes

A Novel Pmma/Neb Bilayer Process for Sub-20 Nm Gold Nanoslits by A Selective Electron Beam Lithography and Dry Etch

Ultrafast Patterning Of Nanostructures In Polymers Using Laser Assisted Nanoimprint Lithography