Abstract:Immersion lithography seeks to extend the resolution of optical lithography by filling the gap between the final optical element and the wafer with a liquid characterized by a high index of refraction. The semiconductor industry demands high throughput, leading to relatively large wafer scanning velocities and accelerations. For higher scanning velocities, an issue that has been identified is the deposition of the immersion liquid while confining a relatively small amount of liquid to the under-lens region. Liquid loss occurs at the receding contact line that forms when a substrate is withdrawn from a liquid, which potentially leads to defects on printed patterns. There has been substantial prior work relative to understanding and building semi-empirical correlations and numerical models to investigate this behavior of the receding three-phase contact line. In the current work, a new liquid injection and collection model with analytic solutions is presented and compared with experimental results, in which the critical velocity for liquid loss is mainly a function of the vacuum degree, the injection flow rate, the properties of the immersion liquid. This correlation allows the critical velocity to be predicted with a given gap height between wafer and lens using only a measurement of the injection speed and knowledge of the fluid properties. Experimentally, glycerin-water mixtures of varying viscosities and different injection flow rates were tested, with variable outlet vacuum degree and inlet speed, showing a mean average error within 12%. This correlation represents a useful tool that can serve to approximately guide the development of fluid control for immersion systems as well as to evaluate alternative immersion fluid candidates to minimize liquid deposition while maximizing throughput.

An Investigation of the Backscattering Yield of Langmuir-Blodgett Resist Films in Electron-Beam Lithography

Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield

Simulation and Experimental Investigation of Immersion Flow Field in Immersion Lithography

Analysis and Research on Monte Carlo Simulation of the Low-Energy Electron Beam Lithography Process

Langmuir-Blodgett resist films for microlithography by exposure to a scanning electron microscope

A New Simulation Method for 3-D Electron Beam Lithography

Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method

Theoretical Study Of Low-Energy Electron Penetration In Resist-Substrate Target By Monte Carlo Simulation

Monte Carlo Simulation of High-Energy Electron Beam Lithography Process

Modeling fluid velocity response for wafer scanning in immersion lithography

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm

Simulation and Analysis of Low-Energy Electron Beam Lithography on Topographical Substrates

Simulation Of The Velocity Distribution For Immersion Lithography

Investigation on the critical velocity for liquid loss in immersion lithography

Study on preparation of ultrathin PMMA resist by Langmuir Blodgett technique

A comparative study of resists and lithographic tools using the Lumped Parameter Model

An automatic Langmuir-Blodgett system based on flowing subphase compression

Monte Carlo Simulation of Electron Transmission Through the Scattering Masks with Angular Limitation for Projection Electron Lithography

Monte Carlo Simulation Study of Quasi-Elastic Electron Scattering from an Overlayer/Substrate System

The Influence of Deposition Process on Polymer Conformation in Langmuir-Blodgett-Films

Electron Beam Lithography Simulation on Homogeneous and Multilayer Substrates