Fabrication of Single-Crystal Silicon Nanoslits with Feature Sizes Down to 4 nm and High Length-Width Ratios

Li Ye,Hao Hong,Zewen Liu
DOI: https://doi.org/10.1109/MEMS46641.2020.9056122
2020-01-01
Abstract:In this paper we report firstly the realization of nanoslits with feature sizes down to sub-4 nm in single-crystal silicon substrate at chip scale. Three-step anisotropic wet etching (TSWE) method was used in the fabrication process and a low-noise current feedback experimental set-up was developed to monitor the slit-opening event in the last step. Individual nanoslit with 3.8 nm width and 3.88 μm length, which means the nanoslit with a length-width ratio more than 1000 was successfully obtained.
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