Abstract:In this work, we demonstrate a process having the capability to realize single-digit nanometer lithography using single heavy ions. By adopting 2.15 GeV <sup>86</sup>Kr<sup>26+</sup> ions as the exposure source and hydrogen silsesquioxane (HSQ) as a negative-tone inorganic resist, ultrahigh-aspect-ratio nanofilaments with sub-5 nm feature size, following the trajectory of single heavy ions, were reliably obtained. Control experiments and simulation analysis indicate that the high-resolution capabilities of both HSQ resist and the heavy ions contribute the sub-5 nm fabrication result. Our work on the one hand provides a robust evidence that single heavy ions have the potential for single-digit nanometer lithography and on the other hand proves the capability of inorganic resists for reliable sub-5 nm patterning. Along with the further development of heavy-ion technology, their ultimate patterning resolution is supposed to be more accessible for device prototyping and resist evaluation at the single-digit nanometer scale.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c04304?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c04304</a>.Experimental methods; a table for comparison of different lithography techniques; theoretical calculation of energy deposition of ions in materials; study of the path and energy deposition of different ions in the material through TRIM simulation (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c04304/suppl_file/nl0c04304_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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