Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

Fabrication of Submicron Devices on the (011) Cleave Surface of a Cleaved-Edge-overgrowth GaAs/AlGaAs Crystal

Fabrication of Optical Cavities with Femtosecond Laser Pulses

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

AFM Tip-Based Fabrication of Silicon Nanostructures with Reduced Subsurface Amorphous Layers

Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

Wafer Scale Fabrication of Highly Dense and Uniform Array of Sub-5 Nm Nanogaps for Surface Enhanced Raman Scatting Substrates.

Controllable growth of (001) surface-oriented colloidal crystals by edge meniscus effect

Fabrication of Metal Nanoscale Devices on Insulating Membranes by High-Resolution Atom Ablation

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Dry etching of deep air holes in GaAs/AlGaAs-based epi-wafer having InAs quantum dots for fabrication of photonic crystal laser

Controllable Fabrication of Gallium Ion Beam on Quartz Nanogrooves

Three-dimensional Microfabrication on GaAs Using a Regular Patterns Mold

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

Transfer printing micro-assembly of silicon photonic crystal cavity arrays: beating the fabrication tolerance limit

Wafer-scale nanofabrication of sub-5 nm gaps in plasmonic metasurfaces

Fabrication of highly homogeneous and controllable nanogratings on silicon via chemical etching-assisted femtosecond laser modification

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

High Aspect Ratio Dry Etching of AlGaAs by Segmented Processing and In-Situ Sidewall Passivation

Fabrication of Sub-10 Nm Gap by Using Electron Beam Lithography

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique