Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

J. Regul,U. F. Keyser,M. Paesler,F. Hohls,U. Zeitler,R. J. Haug,A. Malave,E. Oesterschulze,D. Reuter,A. D. Wieck

DOI: https://doi.org/10.1063/1.1506417

2002-09-09

Abstract:We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect free ballistic constrictions show well resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to directly engrave GaAs/AlGaAs heterostructures by using an atomic force microscope (AFM) with a diamond tip to fabricate high - quality quantum point contacts (QPCs), thereby significantly shortening the processing time and reducing the line width and depletion length.

### Specific problems and solutions:
1. **Shortening the processing time**:
- When engraving with a standard silicon tip, multiple scans (about 100 times) are required, while with a diamond tip, only one scan is needed to achieve the same effect. This shortens the processing time by two orders of magnitude.

2. **Reducing the line width**:
- The line width engraved with a silicon tip is 250 nm, while a line width of 90 nm can be achieved with a diamond tip. This is because the silicon tip wears severely during the engraving process, resulting in a wider line, while the diamond tip hardly wears.

3. **Reducing the depletion length**:
- The depletion length of the sample engraved with a diamond tip is about 180 nm, while that of the sample engraved with a silicon tip is about 330 nm. The reduction of the depletion length helps to form clearer conductance steps and better electron transport properties.

4. **Improving the quality of conductance steps**:
- The sample engraved with a diamond tip shows clear conductance steps and the 0.7 anomaly is observed, indicating the formation of a high - quality one - dimensional channel without obvious potential fluctuations. However, the conductance steps of the sample engraved with a silicon tip are rather fuzzy.

### Research background:
- In recent years, the atomic force microscope (AFM), as a flexible nanolithography tool, has been widely used for directly patterning surfaces. It not only provides a convenient and simple method for fabricating sub - micrometer devices but also can control sample parameters in real - time during the lithography process.
- Mechanical manipulation of semiconductor surfaces is a successful and direct method of AFM and has been verified in various materials such as GaSb, InAs and GaAs.

### Experimental results:
- By comparing the samples engraved with silicon tips and diamond tips, the research found that the diamond tip has a higher hardness (Mohs hardness of 10) and can better maintain its shape, so there is no obvious wear during the engraving process.
- The samples engraved with diamond tips show better electron transport properties, including clear conductance steps and the 0.7 anomaly, which indicate the formation of high - quality quantum point contacts.

### Conclusion:
- This research shows that the AFM engraving technology using diamond tips can quickly and efficiently fabricate high - quality quantum point contacts in GaAs/AlGaAs heterostructures, significantly improving the processing efficiency and device performance.