Abstract:Although the silicon heterojunction (SHJ) solar cell is the crystalline silicon solar cell with highest conversion efficiency at present, its higher cost of production line has been a factor restricting its industrial development. The use of hot wire chemical vapor deposition (HWCVD) technology instead of the mainstream plasma enhanced chemical vapor deposition (PECVD) technology for the deposition of amorphous silicon films can effectively reduce the cost of equipment and processing, and has a bright future. In recent years, i-a-Si:H films grown by PECVD have obtained great improvement in passivation quality, whereas HWCVD technology has been neglected in this field. This has significantly limited the development and application of HWCVD technology in SHJ cell production. In this work, we exploited the differences in the films properties and microstructures deposited by various hot-wire temperatures and successfully developed a structure for the high-passivation-quality i-a-Si:H film grown by HWCVD, consisting of a buffer layer and a double-layer bulk stack. By introducing the buffer layer grown with the 1650 degrees C hot-wire temperature and pure silane, the effective minority carrier lifetime was improved from 2.3 ms to 7.5 ms, and a cell efficiency enhancement of 0.4%abs was obtained. By depositing the bulk layer sequentially with hot-wire temperatures of 1800 degrees C and 1900 degrees C, the passivation quality and the conductance were both improved. An effective minority carrier lifetime of 8 ms and a further cell efficiency enhancement of 0.15%abs were obtained. Finally, SHJ solar cell efficiency of 24.35% was obtained with a home-made HWCVD-based pilot SHJ cell line.

Fabrication of High Growth Rate Solar-Cell-quality C-Si:H Thin Films by VHF-PECVD

Deposition of Microcrystalline Silicon Thin Films for Solar Cells by Vhf-Pecvd

Optimization of High Rate Growth High Quality Μc-Si:H Thin Films and Its Application to the Solar Cells

Low Temperature and High Deposition Rate Fabricating A-Si:H Thin Films and Solar Cells

Grown Low-Temperature Microcrystalline Silicon Thin Film by VHF PECVD for Thin Films Solar Cell

Hydrogenated Microcrystalline Silicon Films Prepared by VHF-PECVD and Single Junction Solar Cell

Study on the Properties of Silicon-based Films with High Growth Rate Fabricated by VHF-PECVD at Low Temperature

HIGH GROWTH-RATE DEPOSITION OF HYDROGENATED MICROCRYSTALLINE SILICON THIN FILM WITH VHF-PECVD

Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells

Deposition and Characterization of High-Efficiency Silicon Thin-Film Solar Cells by HF-PECVD and OES Technology

Large-Area P-μc-Si:H Thin Films Prepared by VHF-PECVD and its Application in Micromorph Tandem Solar Module

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

Structural Optimization and Growth of Intrinsic Hydrogenated Amorphous Silicon Films by HWCVD

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

Fabrication of Hydrogenated Microcrystalline Silicon Thin Films at Low Temperature by VHF-PECVD

Fabrication of Microcrystalline Silicon Materials and Microcrystalline Silicon Solar Cells and Study on Their Properties

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells