Seal and Encapsulate Cavities for Complementary Metal-Oxide-Semiconductor Microelectromechanical System Thermoelectric Power Generators

Jin Xie,Chengkuo Lee,Ming-Fang Wang,Hanhua Feng
DOI: https://doi.org/10.1116/1.3556954
2011-01-01
Abstract:This article presents a method for fabricating thermoelectric power generators (TPGs) using wafer-level vacuum sealing and encapsulation at low temperature with complementary metal-oxide-semiconductor compatible processes and materials. A novel TPG design with thermal legs embedded in top and bottom vacuum cavities is proposed. Simulation results validate that the two cavities can maximize the temperature difference between the hot and cold junctions of thermocouples. Process flows for wafer-level sealing and encapsulating cavities are presented and a thermoelectric power generator is developed based on heavily p- and n-doped polysilicon. A power generation factor of 0.052 μW cm−2 K−2 was achieved using this TPG.
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