Abstract:High-quality aluminum nitride (AlN) films are considered to be the key to the preparation of excellent UV optoelectronic devices. In this paper, metal nitride vapor phase epitaxy (MNVPE) and face-to-face annealing were combined to study the changes in crystal quality, internal stress, and optical properties of AlN films with different V/III ratios after high-temperature annealing with theoretical explanations. X-ray diffraction was used to characterize the film quality. The best quality of AlN films was found at V/III = 4420. After annealing at 1675 C-degrees for 1 h, the quality of AlN films was significantly improved, with the AlN film at V/III = 4420 still having the best quality after annealing, and the full width at half-maximum of the (002) rocking curve was 521 arcsec. Combined with scanning electron microscopy tests, high-temperature annealing led to grain growth in the AlN films, promoting the reduction of grain boundaries. According to the Raman spectroscopy test results, the internal stresses of the annealed AlN films were released. The UV-visible spectroscopy results showed that annealing improved the transmittance and band gap of the films, thus optimizing the optical properties of the AlN films. This work enriches the mechanism of annealing to improve film quality and explores the relationship between the V/III ratio parameter of MNVPE and high-temperature annealing, which is of great significance for preparing high-quality AlN films.

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Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Effects of Rapid Thermal Annealing on Properties of Hfalo Films Directly Deposited by Ald on Graphene

TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

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Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

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Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

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High‐Temperature Annealing of AlGaN

Annealing Effects On The Field Emission Properties Of Aln Nanorods

Impact of Rapid Thermal Annealing on Structural and Electrical Properties of ZnO Thin Films Grown Atomic Layer Deposition on GaAs Substrates

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Relationship Between Annealing and V/III Ratios During MNVPE of AlN Films

Crystal quality evolution of AlN films <i>via</i> high-temperature annealing under ambient N<sub>2</sub> conditions

Effect of Deposition Temperature on the Structural and Surface Properties of AlN by Plasma Enhanced Atomic Layer Deposition

The Effect of Long-Duration High-Temperature Annealing in an Air Ambient on the Properties of AlGaN∕GaN Heterostructures