Co/HfO2 Core-Shell Nanocrystal Memory

Zhou Huimei,Dorman James A.,Perng Ya-Chuan (Sandy),Gachot Stephanie,Huang Jian,Mao Yuanbing,Chang Jane P.,Liu Jianlin
DOI: https://doi.org/10.1557/proc-1250-g01-09
2010-01-01
Abstract:Metal/high-k dielectric core-shell nanocrystal memory capacitors were demonstrated. This kind of MOS memory shows good performance in charge storage capacity, programming and erasing speed. By using a self-assembled di-block co-polymer, Co/HfO2 core-shell nanocrystals showed uniform size and inter distance between crystals. Compared with traditional metal nanocrystal fabrication process with E-Beam Evaporation followed by RTA (Rapid Thermal Annealing), core-shell nanocrystal memory prepared by the co-polymer process produces a wide memory window of 8.4V at the ±12 V voltage sweep. Co/HfO2 core-shell nanocrystals prepared by the low-temperature co-polymer process ensure high reliability of the devices.
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