Abstract:Polymer insulation layers (liners) have several potential advantages in terms of capacitance and reliability over conventional silicon dioxide for through-silicon-via (TSV) applications. This paper reports the development and measurement results of a TSV using poly (propylene carbonate) (PPC) polymer as the insulation layers. To address the challenge in coating thin and uniform PPC liners on the sidewalls of high aspect-ratio vias, a spin-on technique using vacuum treatment and solvent refill is developed to prevent formation of air bubbles in the vias, and using this technique circular vias with aspect-ratio as high as 9:1 have been coated with uniform PPC layers. Based on these results, TSVs with thick PPC polymer liners have been fabricated and the capacitance and the current leakage are measured. Thanks to the relatively large thickness and the low dielectric constant of PPC liners, the TSV capacitance density is about 2.45nF/cm^2 and the leakage current is around 40nA/cm^2 at 5V voltage, indicating that replacing silicon dioxide with PPC as liners considerably reduces TSV capacitance. The preliminary results demonstrate the feasibility of fabrication of high aspect ratio and low capacitance TSVs with polymer liners.

High-Frequency Characterization of Through-Silicon-Vias With Benzocyclobutene Liners

Low Capacitance Through-Silicon-Vias with Uniform Benzocyclobutene Insulation Layers

Reliability of Through-Silicon-vias (tsvs) with Benzocyclobutene Liners.

Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Low-Capacitance Through-Silicon-Vias with Combined Air/Sio2 Liners

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs).

Development of Ultra-Low Capacitance Through-Silicon-vias (tsvs) with Air-Gap Liner

High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers