Abstract:Various literatures have reported that incorporating functional fillers into thermoplastic vulcanizates (TPVs) is an ideal method to prepare functional TPVs with balanced properties. Nevertheless, it is quite difficult to achieve that for thermoplastic silicone vulcanizate (TPSiV) due to their rather high silicon rubber (SiR) content as well as delicate balance between processing ability and various physical properties. Herein, a novel method involves using CNT/TPU phase as polymer matrix to disperse TPSiV particles through solution processing is proposed. Compared with randomly dispersed CNTs and traditional segregated CNTs network with TPSiV particles, composites fabricated by such method illustrate much better balance between various properties, including: low percolation threshold (Pc), comprehensive mechanical performance, better electromagnetic interference (EMI) shielding ability, etc. CNT/TPU anchored TPSiV double-percolated composite illustrates comparable Pc (0.42 wt%) to traditional segregated TPSiV/CNT composite (0.38 wt%), while the TPSiV composite with randomly dispersed CNT shows apparently high Pc (1.37 wt%). More importantly, both tensile strength and elongation at break are improved for these compoistes with double-percolation structure. It is even better than neat TPSiV composites at the same CNT loading. The prepared two types of segregated composites demonstrate similar electrical conductivity at high filler loading (≥1 wt%), enabling them with similar EMI performance, but the one with CNT/TPU as adhesive phase is much more stable after 100 times bending, illustrating negligible attenuation. This study provides a novel approach for incorporating functional fillers into TPSiV matrix for balanced properties.

Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs).

Polymer Liner Formation in High Aspect Ratio Through-Silicon-Vias for 3-D Integration

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

A Novel Manufacturing Scheme for Tsvs with Porous Polymer Insulation Liners

High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers

High-Frequency Characterization of Through-Silicon-Vias With Benzocyclobutene Liners

Low Capacitance Through-Silicon-Vias with Uniform Benzocyclobutene Insulation Layers

Reliability of Through-Silicon-vias (tsvs) with Benzocyclobutene Liners.

Study of a through-silicon/substrate via filling method based on the combinative effect of capillary action and liquid bridge rupture

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Thermal Stresses of Tsvs with Silicon Post Conductors and Polymer Insulators

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Silicon Micromachining Of High Aspect Ratio, High-Density Through-Wafer Electrical Interconnects For 3-D Multichip Packaging

Improved Processing Window of Contact Hole with Directed Self-Assembly of Block Copolymer Blends

A novel method to incorporate functional filler into TPSiV for balanced physical properties