Abstract:High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 μm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

Polymer Liner Formation in High Aspect Ratio Through-Silicon-Vias for 3-D Integration

High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers

Influence of Electroplating Current Density on Through Silicon Via Filling

Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs).

A Novel Manufacturing Scheme for Tsvs with Porous Polymer Insulation Liners

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

Covalently Formation of Insulation and Barrier Layers in High Aspect Ratio TSVs

Alternative insulation liners for through-silicon vias: A comprehensive review

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias

Low-Capacitance Through-Silicon-Vias with Combined Air/Sio2 Liners

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Fabrication of Ultra-Fine Micro-Vias in Non-Photosensitive Polyimide for High-Density Vertical Interconnects

Low Capacitance Through-Silicon-Vias with Uniform Benzocyclobutene Insulation Layers

High-Frequency Characterization of Through-Silicon-Vias With Benzocyclobutene Liners

Implementation of Air-Gap Through-Silicon-Vias (TSVs) Using Sacrificial Technology

Chemical Metallization of Ultrathin Polymer Insulation Film for Through-Silicon Via Application

Fabrication of high aspect ratio, non-line-of-sight vias in silicon carbide by a two-photon absorption method

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers