Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

Alternative insulation liners for through-silicon vias: A comprehensive review

Polymer Liner Formation in High Aspect Ratio Through-Silicon-Vias for 3-D Integration

A Novel Manufacturing Scheme for Tsvs with Porous Polymer Insulation Liners

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Reliability of Through-Silicon-vias (tsvs) with Benzocyclobutene Liners.

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

Thermal Reliability Tests of Air-Gap TSVs with Combined Air-SiO2Liners

A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

Low-Capacitance Through-Silicon-Vias with Combined Air/Sio2 Liners

Implementation of Air-Gap Through-Silicon-Vias (TSVs) Using Sacrificial Technology

High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers

Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias

Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias

Research of Vertical via Based on Silicon, Ceramic and Glass

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

Wafer Scale Insulation of High Aspect Ratio Through-Silicon Vias by iCVD

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

Thermal and electrical tests of air-gap TSV