Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Wafer Scale Insulation of High Aspect Ratio Through-Silicon Vias by iCVD

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Fabrication of high aspect ratio, non-line-of-sight vias in silicon carbide by a two-photon absorption method

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Copper-Based TSV: Interposer

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Tailored Femtosecond Bessel Beams for High-Throughput, Taper-Free Through-Silicon Vias (tsvs) Fabrication

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Testing 3D chips containing through-silicon vias

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers