Abstract:Abstract Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

Implementation of Air-Gap Through-Silicon-Vias (TSVs) Using Sacrificial Technology

Development of Ultra-Low Capacitance Through-Silicon-vias (tsvs) with Air-Gap Liner

Low-Capacitance Through-Silicon-Vias with Combined Air/Sio2 Liners

Thermal Reliability Tests of Air-Gap TSVs with Combined Air-SiO2Liners

Ultralow-Capacitance Through-Silicon Vias with Annular Air-Gap Insulation Layers

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Thermal and electrical tests of air-gap TSV

High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers

Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

Electrothermal modelling of through silicon via (TSV) interconnects

On the Efficacy of Through-Silicon-Via Inductors

Mechanical Reliability Testing of Air-Gap Through-Silicon Vias

Air-gap/SiO<inf>2</inf> liner TSVs with improved electrical performance

A Novel Manufacturing Scheme for Tsvs with Porous Polymer Insulation Liners

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Low Capacitance Through-Silicon-Vias with Uniform Benzocyclobutene Insulation Layers

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Recent Progress of TGV Technology for High Performance Semiconductor Packaging