Air-gap/SiO<inf>2</inf> liner TSVs with improved electrical performance

cui huang,dong wu,liyang pan,zheyao wang
DOI: https://doi.org/10.1109/3DIC.2015.7334612
2015-01-01
Abstract:This paper reports fabrication and characterization of TSVs that use combined air-gap/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as the insulators. Fabrication technologies based on reactive ion etching (RIE) of benzocyclobutene (BCB) sacrificial layers have been developed to fabricate uniform and high aspect-ratio air-gaps, and air-gaps with thickness of 2 μm and aspect-ratio of 25:1 have been successfully fabricated. The measured capacitance-voltage (C-V) and current-voltage (I-V) curves at room temperature and high temperatures show that the TSVs with air-gap/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> liners have low capacitance and leakage current. Compared with the TSVs using a sole air-gap insulator, the additional SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> liners protects the TSV from being influenced by the residues of sacrificial materials, and the electrical performance and thermal stability are improved.
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