Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.

ESD Protection Design for VBO-based High-speed Multimedia Interface Chip

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

An Overview of ESD Protection in Nanometer IC

Improvement on Diode String Structure for 65-Nm RF ESD Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

ESD protection design of DDSCR structure based on the 0.5 BCD process

System Efficient ESD Design of IO ESD Protection

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI