Abstract:The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 mu A, field-effect mobility of 13.4 cm(2) V-1 s(-1), and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology.

Endurance Characterization of the Cu-dope HfO2 Based Selection Device with One Transistor-One Selector Structure

Self-compliance Cu-doped HfO2-based Selector with Low Leakage and High Reliability

Cu BEOL Compatible Selector with High Selectivity (>107), Extremely Low Off-Current (∼pa) and High Endurance (>1010)

Cu Beol Compatible Selector With High Selectivity (> 10(7)), Extremely Low Off-Current (Similar To Pa) And High Endurance (> 10(10))

Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance

Endurance Improvement of HfO $_{\text{2}}$ -Based FeFETs on FDSOI Platform by Al $_{\text{2}}$ O $_{\text{3}}$ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies

Doping Profile Modification Approach of the Optimization of HfO X Based Resistive Switching Device by Inserting AlO X Layer

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf 0.5 Zr 0.5 O 2 /SiO x Interface to Suppress Oxygen Vacancy Generation

Nb1-xO2 Based Universal Selector with Ultra-high Endurance (> 10(12)), High Speed (10ns) and Excellent V-th Stability

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

HfO 2 –ZrO 2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance

Nonvolatile Resistive Switching Characteristics of HfO2 with Cu Doping

Forming-free, ultra-high on-state current, and self-compliance selector based on titanium-doped NbOx thin films

Tunable-performance All-Oxide Structure Field-Effect Transistor Based Atomic Layer Deposited Hf-doped In2O3 Thin Films.

Characteristics of Nb-doped SrTiO3 and HfO2-based Selector Devices

Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ $\textit{V}_{\text{th}}$ Measurement

Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device

A Reliable 2 Bit MLC FeFET with High Uniformity and 109 Endurance by Gate Stack and Write Pulse Co-optimization

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications