Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance

Qing Luo,Xiaoxin Xu,Hangbing Lv,Tiancheng Gong,Shibing Long,Qi Liu,Haitao Sun,Ling Li,Nianduan Lu,Ming Liu
DOI: https://doi.org/10.1109/iedm.2016.7838399
2016-01-01
Abstract:We report a novel TaOx-based selector with trapezoidal band structure, formed by rapid thermal annealing in O 2 plasma. Salient features were successfully achieved, such as high current density (1MA/cm 2 ), high selectivity (5×10 4 ), low off-state current (~10 pA), robust endurance (>10 10 ), self-compliance and excellent uniformity. The device is composed of fully CMOS-compatible materials and has no thermal budget compatibility concerns. Furthermore, the selector was fabricated in 1kb crossbar array and the integrated 1S1R device shows high nonlinearity in low resistance state (LRS), which is quite effective to solve the sneaking current issue. The demonstrated high performance selector device here shows high potential on manufacturing large scale crossbar array.
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