Determinations of Mean Charge Depth and Charge Density in Electret Based on Silicon Substrate

张晓青,夏钟福,张冶文,柳襄怀
DOI: https://doi.org/10.3969/j.issn.0255-8297.2001.04.003
2001-01-01
Journal of Applied Science
Abstract:In this paper, a method for determining the mean charge depth and equivalent surface charge density in an electret-semiconductor system is presented. It consists of two nondestructive measurements. Firstly, the surface potential at the electret-air interface is measured by the compensation method. Secondly, using a contacting front electrode, a metal insulator semiconductor structure (MIS) is formed, on which C-V measurement is carried out. The mean charge depth and the charge density can be calculated. The method was applied to the electret double layers of Si 3N 4/SiO 2 based on silicon substrate. It was found that the annealing temperature influences the mean charge depth markedly. The mean charge depth of the sample positively charged at room temperature shifted to the interface of Si 3N 4 and SiO 2 from the free surface after annealed at 400°C for 20 minutes.
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