Abstract:This paper introduces the first comprehensive and accurate compact resistance-inductance-capacitance-conductance (RLCG ) model for through-silicon vias (TSVs) in 3-D ICs valid from low- to high-frequency regimes, with consideration of the MOS effect in silicon, the alternating-current (ac) conduction in silicon, the skin effect in TSV metal, and the eddy currents in the silicon substrate. The model is verified against electrostatic measurements as well as a commercial full-wave electromagnetic simulation tool and subsequently employed for various performance (delay) analyses. The compact model is also applicable to TSVs made of carbon nanotube (CNT) bundles, once a slight modification (making the effective conductivity complex) is made. Various geometries (as per the International Technology Roadmap for Semiconductors) and prospective materials (Cu, W, and single-walled/multiwalled CNTs) are evaluated, and a comparative performance analysis is presented. It is shown that CNT-bundle-based TSVs can offer smaller or comparable high-frequency resistance than those of other materials due to the reduced skin effect in CNT bundle structures. On the other hand, the performance (delay) analysis indicates that the performance differences among different TSV materials are rather small. However, it is shown that CNTs provide an improved heat dissipation path due to their much higher thermal conductivity. In addition, the improved mechanical robustness and thermal stability of CNTs also favor their selection as TSV materials in emerging 3-D ICs.

Wideband Modeling and Characterization of Differential Through-Silicon Vias for 3-D ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Modeling of Carbon Nanotube-Based Differential Through-Silicon Vias in 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrothermal modelling of through silicon via (TSV) interconnects

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Wideband impedance model for coaxial through-silicon vias in 3-D integration

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs

Compact AC modeling and analysis of Cu, W, and CNT based through-silicon vias (TSVs) in 3-D ICs

Modeling annular through-silicon Via pairs in 3-D integration