Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Optical Investigations of Be Doped Zno Films Grown by Molecular Beam Epitaxy

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Optical Properties and Structural Characteristics of Zno Thin Films Grown on A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Optical Properties of Antimony-Doped P-Type Zno Films Fabricated by Pulsed Laser Deposition

Photoluminescence in Heavily Doped Zno : N : in Films

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Photoluminescence Study of Sb-doped P-Type ZnO Films by Molecular-Beam Epitaxy

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Optical properties of p-type ZnO doped by lithium and nitrogen

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

High-Mobility Sb-Doped P-Type Zno by Molecular-Beam Epitaxy

Temperature-Dependent Photoluminescence of Zno Films Codoped with Tellurium and Nitrogen

Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium

Bi-induced Acceptor States in ZnO by Molecular-Beam Epitaxy

The Evolution And Mechanisms Of Unintentional Doping In Zno Epitaxial Growth

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents