Capacitance–voltage characteristics of Pt/Bi 2 VO 5.5 /p-Si structures

Zhenlun Zhang,Hongmei Deng,Pingxiong Yang

DOI: https://doi.org/10.1007/s10854-010-0165-0

2010-01-01

Abstract:Ferroelectric Bi 2 VO 5.5 thin films were fabricated on p-type (100) Si substrates by sol–gel method and then annealed at different temperatures. The microstructures and surface morphologies of the Bi 2 VO 5.5 thin films were examined by X-ray diffraction and atomic force microscope, respectively. The results indicate that the Bi 2 VO 5.5 thin films show high c -axis preferred orientation and are compatible well with p-type Si substrates. The capacitance–voltage characteristics of Pt/Bi 2 VO 5.5 /Si capacitors measured at 1 MHz shows a clockwise hysteresis loop. The memory window of the hysteresis loop is 0.42 V with the gate voltage from −4 to 4 V. It is found that the memory window may be determined by the competition between ferroelectric polarization and charge injection.