Epitaxial Growth And Capacitance-Voltage Characteristics Of Bifeo3/Ceo2/Yttria-Stabilized Zirconia/Si(001) Heterostructure

Zhongqiang Hu,Meiya Li,Yongdan Zhu,ShiZhou Pu,Xiaolian Liu,Bobby Sebo,Xingzhong Zhao,Shuxiang Dong
DOI: https://doi.org/10.1063/1.4730621
IF: 4
2012-01-01
Applied Physics Letters
Abstract:We report the epitaxial growth of multiferroic BiFeO3 (BFO) film on Si(001) substrate by pulsed laser deposition using CeO2/yttria-stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO2(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO parallel to[100]CeO2 parallel to[100]YSZ parallel to[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO2/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5V at sweeping voltages of +/-16 V. Both the high and low capacitance values showed no obvious degradation after 10(4) s. The improved retention property was attributed to the use of high-k CeO2/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730621]
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