Low-Temperature Growth And Characterization Of Epitaxial La0.5sr0.5coo3/Pb(Zr0.52ti0.48)O-3/La0.5sr0.5coo3 Capacitors On Srtio3/Tin Buffered Si(001) Substrates

Wb Wu,Kh Wong,Cl Mak,Cl Choy

DOI: https://doi.org/10.1088/0022-3727/34/11/305

2001-01-01

Abstract:We report on the low-temperature growth and characterization of epitaxial all-oxide ferroelectric thin film capacitors. La0.5Sr0.5CoO3/Pb(Zr0.52Ti0.48)O-3/La0.5Sr0.5CoO3, on Si(001) substrates by use of SrTiO3/TiN as buffer layers. The capacitor and the buffer layer stack were grown sequentially at 540 degreesC by in situ pulsed laser deposition. Structural characterization using three-axis x-ray diffraction (specular and off-specular theta -2 theta scan, omega -scan rocking curve, and phi scan) reveals a parallel growth for all layers. Scanning electron micrographs show that the epitaxial heterostructures have a smooth and crack-free surface. The sharp characteristic optical absorption bands of the SrTiO3 and Pb(Zr0.52Ti0.48)O-3 layers also imply good crystallinity in the as-grown films. Resistivity versus temperature measurements show that both the bottom and top oxide electrodes are highly conductive with resistivity at 300 K of 170 and 140 mu Omega cm, respectively. Remanent polarization of 19 muC cm(-2), coercive field of 45 kV cm(-1) and negligible fatigue after 10(9) cycles at 8 V indicate good electric performance of the integrated capacitor structure.