Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes
Zengxing Lu,Zhen Fan,Peilian Li,Hua Fan,Guo Tian,Xiao Song,Zhongwen Li,Lina Zhao,Kangrong Huang,Fengyuan Zhang,Zhang,Min Zeng,Xingsen Gao,Jiajun Feng,Jianguo Wan,Junming Liu
DOI: https://doi.org/10.1021/acsami.6b07792
2016-01-01
Abstract:Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and ∼60 nm, respectively, representing an ultrahigh ferroelectric memory density of ∼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.