Abstract:This paper describes the improvement of advanced semi-additive processes (SAP) to demonstrate 1.5-5 μm lines and spaces with 4-5 μm diameter photo-vias for multiple re-distribution layers (RDL) at 20 μm bump pitch on glass interposers. High performance computing systems for networking and graphics are driving ultra-high bandwidth interconnections between logic and memory devices. This signal bandwidth need with lowest power consumption has enabled the application of 2.5D interposers for high density chip-to-chip interconnections. Silicon interposers with through-silicon-vias (TSVs) are capable of ultra-high density wiring between logic and memory chips, but use back end of line (BEOL) dual damascene processes, requiring chemical mechanical polishing (CMP), leading to high process cost, which limits their expansion into lower cost and higher volume applications. On the other hand, organic substrates processed on large panels have large capture pads for via landing due to their poor dimensional stability, limiting the bump pitch scaling at chip level. Glass interposers have been proposed to address the limitations of both silicon interposers and organic substrates in recent years. This paper reports on research to extend low cost and large panel semi-additive processes (SAP) to below 5um lines and vias. To achieve this, high resolution lithography processes combined with photosensitive dry film polymer dielectrics were optimized to form fine patterns and ultra-small micro-vias. A major challenge for multilayer RDL is the non co-planarity of copper electroplating, and a new cost-effective copper surface planarization process was proposed and evaluated for surface co-planarity improvement, leading to better yields for multi-layer RDL fabrication.

Fabrication of Redistribution Layer (RDL) Based on AlN/Sodium Silicate Composite for TSV Interposers

Process Development and Characterization of BCB-based Redistribution Layer (RDL) for Silicon Interposer Application

Interposer Fabrication with Annular Copper Tsv and Multi-Layered Redistribution Layer

Heterogeneous Bonding with Nanostructured Silver Langmuir-Blodgett Film

The Redistribution Layer-First Embedded Fan-Out Wafer Level Packaging for 2-D Ultrasonic Transducer Arrays

Advances in Panel Scalable Planarization and High Throughput Differential Seed Layer Etching Processes for Multilayer RDL at 20 Micron I/O Pitch for 2.5D Glass Interposers

A Novel Low-Warpage Hyper RDL (HRDL) Interposer Enabled by Low Temperature Hybrid Bonding for Advanced Packaging Applications

Fabrication and High-Frequency Characterization of Low-Cost Fan-In/out WLP Technology with RDL for 2.5D/3D Heterogeneous Integration

Covalently Formation of Insulation and Barrier Layers in High Aspect Ratio TSVs

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Improved performances of AlN/polyimide hybrid film and its application in redistribution layer

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Recent Progress in SLID Bonding in Novel 3D-IC Technologies

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Fabrication of 3D Packaging TSV using DRIE

Development Of Fine Line Build-Up Organic Substrate Using Thin Film Rdl Technology

Process Development of Thick Si Interposer for 2.5d Integration of Rf Mems Devices

Design and fabrication of a TSV interposer for SRAM integration

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating