Fabrication of 3D Packaging TSV using DRIE

M. Puech,Jean-Marc Thevenoud,J.M. Gruffat,N. Launay,N. Arnal,P. Godinat

DOI: https://doi.org/10.48550/arXiv.0805.0919

2008-05-07

Abstract:Emerging 3D chips stacking and MEMS/Sensors packaging technologies are using DRIE (Deep Reactive Ion Etching) to etch through-silicon via (TSV) for advanced interconnections. The interconnection step can be done prior to or post CMOS manufacturing, each requiring different etch process performances. A review of the DRIE capability in terms of etching profile, etch rate, etch depth has been carried out. Excellent tool flexibility allows a wide range of basic and complex profiles to be achieved. Unlike other techniques, DRIE has the capability to etch feature sizes ranging from sub-micron to millimeter width. The main specificity of the DRIE is that etch rate is sensitive to the total exposed area and the aspect ratio. For the TSV applications, where the total exposed area is lower than 10%, high etch rates are achievable. A study has also been done to highlight the importance of via profile for the success of the refilling step. In addition, due to the high flexibility of DRIE, we also explore the capability of using this technique for wafer thinning and plasma die separation.

Other Computer Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is in 3D packaging technology, different chip stacking methods connected by Through Silicon Via (TSV) and the key challenges in their manufacturing processes. Specifically, the paper focuses on how to use Deep Reactive Ion Etching (DRIE) technology to define TSVs of different shapes, depths and sizes, and how to apply the low - temperature (<150°C) Plasma Enhanced Chemical Vapor Deposition (PECVD) process in highly - demanding CMOS Image Sensors (CIS) packaging. The paper explores three main strategies for TSV manufacturing: 1. **Via First prior to FEOL** (Via First before Front - End - Of - Line): Make TSVs on a blank silicon wafer before any CMOS process. The advantage of this method is that it can be integrated into the existing manufacturing process and does not require additional expensive equipment. 2. **Via First after BEOL** (Via First after Back - End - Of - Line): Make TSVs after the CMOS device is completed but before the grinding process. This method allows the use of copper as a filling material, which has better electrical and thermal properties. 3. **Via Last after BEOL** (Via Last after Back - End - Of - Line): Make TSVs after the device wafer is ground and thinned to the final thickness. This method requires temporarily bonding the device wafer to a carrier wafer to ensure stability and temperature control during the process. The paper also details the DRIE process, especially the "Bosch" process and "S.H.A.R.P." (Super High Aspect Ratio Process) process, which can achieve high - aspect - ratio TSV etching, and discusses the application of the low - temperature PECVD process in TSV insulation layer deposition. The development of these technologies is of great significance for improving the electrical performance of TSVs, the selection of filling materials and cost control.

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