Abstract:With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore's Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed.

Through wafer via technology for 3-D packaging

Implementation of three-dimensional SOI-MEMS wafer-level packaging using through-wafer interconnections

A wet process to etch arrayed vias for through silicon via application of 3D packaging

Thru-Wafer Interconnect for Soi-Mems 3d Wafer-Level Hermetic Packaging

Fabrication Technology of Micro Through-hole on Silicon Wafer

Development & Applications of Through Wafer Interconnect Technology

Silicon Micromachining Of High Aspect Ratio, High-Density Through-Wafer Electrical Interconnects For 3-D Multichip Packaging

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Research on Wafer-Level MEMS Packaging with Through-Glass Vias

Fabrication of 3D Packaging TSV using DRIE

Research on deep RIE-based through-si-via micromachining for 3-D system-in-package integration

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Research of Vertical via Based on Silicon, Ceramic and Glass

Through-silicon-via technology for 3D integration

Implementation of Silicon-on-glass MEMS Devices with Embedded Through-Wafer Silicon Vias Using the Glass Reflow Process for Wafer-Level Packaging and 3D Chip Integration

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

An efficient electrical addressing method using through-wafer vias for two-dimensional ultrasonic arrays

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Through silicon via copper electrodeposition for 3D integration

Fabrication of through sapphire vias by femtosecond laser bidirectional drilling